Energy Transfer Efficiency from ZnO-Nanocrystals to Eu3+ Ions Embedded in SiO2 Film for Emission at 614 nm
نویسندگان
چکیده
In this work, we study the energy transfer mechanism from ZnO nanocrystals (ZnO-nc) to Eu3+ ions by fabricating thin-film samples of ZnO-nc and Eu3+ ions embedded in a SiO₂ matrix using the low-cost sol-gel technique. The time-resolved photoluminescence (TRPL) measurements from the samples were analyzed to understand the contribution of energy transfer from the various ZnO-nc emission centers to Eu3+ ions. The decay time obtained from the TRPL measurements was used to calculate the energy transfer efficiencies from the ZnO-nc emission centers, and these results were compared with the energy transfer efficiencies calculated from steady-state photoluminescence emission results. The results in this work show that high transfer efficiencies from the excitonic and Zn defect emission centers is mostly due to the energy transfer from ZnO-nc to Eu3+ ions which results in the radiative emission from the Eu3+ ions at 614 nm, while the energy transfer from the oxygen defect emissions is most probably due to the energy transfer from ZnO-nc to the new defects created due to the incorporation of the Eu3+ ions.
منابع مشابه
Study of energy transfer mechanism from ZnO nanocrystals to Eu3+ ions
In this work, we investigate the efficient energy transfer occurring between ZnO nanocrystals (ZnO-nc) and europium (Eu(3+)) ions embedded in a SiO2 matrix prepared using the sol-gel technique. We show that a strong red emission was observed at 614 nm when the ZnO-nc were excited using a continuous optical excitation at 325 nm. This emission is due to the radiative (5)D0 → (7)F2 de-excitation o...
متن کاملEnergy Transfer from Silicon Nanocrystals to Er Ions Embedded in Silicon Oxide Matrix
Silicon (Si) based light emitting devices have drawn much attention for the integration of electronic and photonics. Si nanostructures (amorphous clusters or crystals) have been recognized as good candidates for effective light emitting devices (Bulutay, 2007; Seino et al., 2009; Takagahara & Takeda, 2007; Wolkin et al., 1999). However, photons emitted by Si nanostructures can be reabsorbed by ...
متن کاملAnnealing temperature and environment effects on ZnO nanocrystals embedded in SiO2: a photoluminescence and TEM study
We report on efficient ZnO nanocrystal (ZnO-NC) emission in the near-UV region. We show that luminescence from ZnO nanocrystals embedded in a SiO2 matrix can vary significantly as a function of the annealing temperature from 450°C to 700°C. We manage to correlate the emission of the ZnO nanocrystals embedded in SiO2 thin films with transmission electron microscopy images in order to optimize th...
متن کاملRoom temperature enhanced red emission from novel Eu(3+) doped ZnO nanocrystals uniformly dispersed in nanofibers.
Achieving red emission from ZnO-based materials has long been a goal for researchers in order to realize, for instance, full-color display panels and solid-state light-emitting devices. However, the current technique using Eu(3+) doped ZnO for red emission generation has a significant drawback in that the energy transfer from ZnO to Eu(3+) is inefficient, resulting in a low intensity red emissi...
متن کاملDepth distribution of luminescent Si nanocrystals in Si implanted SiO2 films on Si
Depth-resolved measurements of the photoluminescence of Si implanted and annealed SiO2 films on Si have been performed to determine the depth distribution of luminescent Si nanocrystals. Si nanocrystals with diameters ranging from ;2 to 5 nm were formed by implantation of 35 keV Si ions into a 110-nm-thick thermally grown SiO2 film on Si~100! at a fluence of 6310 16 Si/cm, followed by a thermal...
متن کامل